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IP.com Disclosure Number: IPCOM000067289D
Original Publication Date: 1979-Jul-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Lee, CH [+details]

Abstract

A process is described for fabricating a self-aligned emitter having a shallow junction and low leakage, and suitable for use in high frequency transistors.