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Nondestructive Contactless Method To Determine Diffusion Profile Of Arsenic In Silicon

IP.com Disclosure Number: IPCOM000067324D
Original Publication Date: 1979-Jul-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Chaudhari, PK [+details]

Abstract

This article describes a nondestructive, contactless method to measure (1) arsenic concentration in doped glass and (2) diffusion parameters of arsenic-diffused layers in silicon through an undoped SiO(2) barrier. The technique can be used to monitor in-process diffusion parameters of the arsenic-diffused layers in silicon and the arsenic content in the doped glass using calibrated curves of the standard samples to be monitored routinely.