Nondestructive Contactless Method To Determine Diffusion Profile Of Arsenic In Silicon
Original Publication Date: 1979-Jul-01
Included in the Prior Art Database: 2005-Feb-20
This article describes a nondestructive, contactless method to measure (1) arsenic concentration in doped glass and (2) diffusion parameters of arsenic-diffused layers in silicon through an undoped SiO(2) barrier. The technique can be used to monitor in-process diffusion parameters of the arsenic-diffused layers in silicon and the arsenic content in the doped glass using calibrated curves of the standard samples to be monitored routinely.