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Reduction Of Oxidation Induced Defects Using Reactive Ion Etching

IP.com Disclosure Number: IPCOM000067326D
Original Publication Date: 1979-Jul-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Beyer, KD Gdula, RA [+details]

Abstract

Oxidation-induced stacking faults and their impact on junction leakages have been studied by etching experiments and MOS capacitor evaluations. Wafer backside gettering is effective in reducing the number of electrically active defects on the wafer frontside. After wafer backside gettering, the backside damage (containing the gettered metallic impurities) can be removed by reactive ion etching (RIE) as described, for example, in the IBM Technical Disclosure Bulletin 20, 1389-1390 (September 1977).