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Self-Biased Transistor Life Test Circuit Disclosure Number: IPCOM000067337D
Original Publication Date: 1979-Jul-01
Included in the Prior Art Database: 2005-Feb-20

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Yu, CC [+details]


The circuit shown above is used to stress transistors in the active region (emitter-base forward bias, collector-base reverse bias). The primary advantage of this circuit is that I(E) and V(BC) are essentially constant within a wide range of Beta.