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Ion Beam Etchings Using HCl

IP.com Disclosure Number: IPCOM000067365D
Original Publication Date: 1979-Jul-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Hiraoka, H [+details]

Abstract

The inherent high resolution capability of an ion beam etching technique has been reported. So far, argon ion beams have been most extensively used; the only exception is oxygen ion beams used for etching carbon masks, which have the lowest etching rate under argon ion bombardment in the absence of oxygen. Except for the case of a carbon mask-oxygen ion beam, specific chemical reactions between the ion beams and the substrate, particularly a silicon wafer substrate, are considered to be negligible.