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Injection lasers of the transverse junction stripe type can be improved by using different doping levels to produce reverse biased junctions in all layers but the active layer.
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Structure For A Transverse Junction Stripe Laser
Injection lasers of the transverse junction stripe type can be improved by
using different doping levels to produce reverse biased junctions in all layers but
the active layer.
The improved structure is shown in Fig. 1.
The concentration variation of Zn doping level from the contact sur ace for
positions A and B in the structure is shown in Figs. 2 and 3, respectively.
In this design the active layer is doped heavily n-type. A deep lower
concentration, P diffusion (Zn) is used to isolate all layers but the active layer. By
a suitable adjustment of the doping levels, this isolation diffusion can produce a
reverse biased junction for all layers but the active layer. Fig. 1 illustrates the
main, P+ diffusion which makes all layers p-type and the isolation diffusion which
makes all layers, but the active layer, p-type.
The different Zn concentrations in these two diffusions may be achieved by
using either different Zn sources or different diffusion temperatures, or an initial
diffusion with a high surface concentration followed by a "drive in" diffusion. A
further method would be to have a mask over the isolation stripe which is semi-
transparent to Zn, thus reducing the surface concentration. This would allow both
stripes to be diffused at the same time.
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