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Buried Diffusion Storage Node Memory Cell

IP.com Disclosure Number: IPCOM000067474D
Original Publication Date: 1979-Aug-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Fatula, JJ Garbarino, PL [+details]

Abstract

The Fig. 3 one-device dynamic random-access memory cell increases the storage capacity to 1000-2000 femtofarads at 5 V supply by using the region 5 under the MOSFET device to store charge. Such region is made using an N+ diffused region in the P epitaxial layer and a reactively ion etched reachthrough 6 to contact that region. The device density is comparable to current designs, but the charge storage is greater.