Individual Wafer Etch Rate Control In Batch Reactor
Original Publication Date: 1979-Aug-01
Included in the Prior Art Database: 2005-Feb-20
In reactive ion etch plasma reactors which are configured as a diode (or a triode), and a flat plate is used both as the RF power electrode and as a wafer susceptor, the etch rate on an individual wafer may be controlled by controlling the local RF field to which the wafer is exposed. The local RF field may be suppressed by grounding the portion of the electrode which lies directly under the wafer to be controlled.