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Self Aligned Polysilicon Contacts

IP.com Disclosure Number: IPCOM000067483D
Original Publication Date: 1979-Aug-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Das, G Lee, CH [+details]

Abstract

Two processes are described for fabricating polysilicon contacts. One process provides an emitter that has (1) a horizontal gradient which prevents tunneling at the sidewalls and (2) a high concentration in the vertical direction which provides a sharp gradient. The other process achieves the same objectives as the first process, but also provides a polysilicon base contact which is self-aligned with respect to the emitter contact.