Self Aligned Polysilicon Contacts
Original Publication Date: 1979-Aug-01
Included in the Prior Art Database: 2005-Feb-20
Two processes are described for fabricating polysilicon contacts. One process provides an emitter that has (1) a horizontal gradient which prevents tunneling at the sidewalls and (2) a high concentration in the vertical direction which provides a sharp gradient. The other process achieves the same objectives as the first process, but also provides a polysilicon base contact which is self-aligned with respect to the emitter contact.