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Method For Increasing The Critical Resolved Shear Stress In Silicon Wafers

IP.com Disclosure Number: IPCOM000067488D
Original Publication Date: 1979-Aug-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Guillot, A Leroy, B Plougonven, C [+details]

Abstract

When a boat containing silicon wafers is directly withdrawn from a furnace (for example, after a standard oxidation step) at high temperature in the range of 800-100 degrees C, important stresses are noticed both at the center and at the periphery of the wafers.