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Method Of Etching Fine Structures In Silicon

IP.com Disclosure Number: IPCOM000067493D
Original Publication Date: 1979-Aug-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Briska, M Schackert, R Schmitt, A [+details]

Abstract

A method for the wet chemical etching of fine structures in silicon can be implemented by means of a photoresist degraded by ion implantation. Such a resist is not attacked by highly acidic polishing etches. After etching, the resist can be removed in an oxygen plasma or by the application of high temperatures. The method, which is described in detail below by way of an example, can be used to etch grooves for the dielectric isolation, to produce permanent marks for mask alignment, to etch mesa structures, or to mark silicon chips or wafers, and the like.