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Stress Relieving Annealing Technique For SOS Structures

IP.com Disclosure Number: IPCOM000067594D
Original Publication Date: 1979-Aug-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Fang, FF Sai-Halasz, GA Sedgwick, TO Segmuller, AP [+details]

Abstract

The compressive stress in a silicon layer when silicon is grown on sapphire (SOS) may be relieved by a non-equilibrium annealing wherein the silicon is heated for a short duration, while the sapphire remains at a relatively low temperature.