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Al(2)O(3) Dielectric Isolation With SelfAligned Channel Stopper Disclosure Number: IPCOM000067595D
Original Publication Date: 1979-Aug-01
Included in the Prior Art Database: 2005-Feb-20

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Rideout, VL Silvestri, VJ [+details]


This article describes a unique combination of steps and techniques to achieve dielectric isolation with Al(2)O(3) . The resultant structure is similar to those that presently employ SiO(2) to isolate high density integrated circuits. A unique feature of the described process is that it forms the required dielectric isolation at near room temperature.