Al(2)O(3) Dielectric Isolation With SelfAligned Channel Stopper
Original Publication Date: 1979-Aug-01
Included in the Prior Art Database: 2005-Feb-20
This article describes a unique combination of steps and techniques to achieve dielectric isolation with Al(2)O(3) . The resultant structure is similar to those that presently employ SiO(2) to isolate high density integrated circuits. A unique feature of the described process is that it forms the required dielectric isolation at near room temperature.