Browse Prior Art Database

Single V-Groove High Density Static Random Access Memory Cell

IP.com Disclosure Number: IPCOM000067611D
Original Publication Date: 1979-Aug-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Schuster, SE [+details]

Abstract

The layout of a prior art VMOS static random-access memory cell described in (*) is shown in Fig. 1. Two V-groove devices with two separate V grooves are used to form the latch cross-coupled devices. The major advantage of the VMOS vertical structure is the buried source region which is the common ground node of the cross-coupled latch. The elimination of a separate contact and line to supply ground to the cell helps to minimize cell density.