Stable SBD For Nitride Passivated Processes Via Oxide Step Reduction
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20
This article describes a semiconductor integrated circuit process formation modified by the addition of a mask level whereby a highly stable Schottky barrier device to be later formed is initially defined when the base region of an adjacent transistor is defined. By forming the Schottky barrier device after the transistor has been formed, a more stable Schottky barrier device is realized. The process is described below.