Browse Prior Art Database

Memory Sense Amplifier Circuit

IP.com Disclosure Number: IPCOM000067670D
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Gaworecki, JM Thoma, NG [+details]

Abstract

This sensing circuit for dynamic FET memory systems provides high performance with high noise immunity and includes a pair of cross-coupled sense latch sub-circuits. The circuit can be used for sensing data signals in arrays of single-device dynamic memory cells coupled to bit line pairs.