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Memory Sense Amplifier Circuit Disclosure Number: IPCOM000067670D
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20

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Gaworecki, JM Thoma, NG [+details]


This sensing circuit for dynamic FET memory systems provides high performance with high noise immunity and includes a pair of cross-coupled sense latch sub-circuits. The circuit can be used for sensing data signals in arrays of single-device dynamic memory cells coupled to bit line pairs.