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Process For Making Multilayer IC Substrate

IP.com Disclosure Number: IPCOM000067677D
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Gow, J Hoffman, HS Lafer, W [+details]

Abstract

A process for making a multilayer integrated circuit substrate may be described generally as follows: 1. Blanket evaporate Cr-Cu-Cr onto a ceramic substrate (Ml). 2. Photoetch M1 personality. 3. Apply polyimide insulating layer. 4. Photoetch via holes in the polyimide layer. 5. Cure polyimide at 360 degrees C in nitrogen. 6. Etch top Cr layer from via holes. 7. Treat polyimide with O(2) plasma for subsequent adhesion to M2 layer. 8. Wet clean M1 with H(2)SO(4). 9. Evaporate a second Cr-Cu-Cr layer (M2). 10. Personalize M2.