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Double Dielectric Process For Multilevel Metal

IP.com Disclosure Number: IPCOM000067689D
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Bartush, TA Mauer, JL Rothman, LB [+details]

Abstract

Multilevel metal has become a necessity due to the limitations on the wirability of semiconductor devices. As the devices decrease in size and increase in density, more than three levels of wire are required.