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Method Of Etching Aluminum Wires For Long V-Groove VMOS Random Access Memory

IP.com Disclosure Number: IPCOM000067692D
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Tsang, PJ [+details]

Abstract

One of the more important processing steps in VMOS random-access memory, fabrication is the delineation of word lines that cross a long V-groove. In using the conventional single-layer resist masking technique, bridging of the word lines at the bottom of the V-groove can occur. This is due to the fact that resist in the V-groove, being much thicker than that outside the V-groove, is either underexposed or not exposed.