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Photoresist Stripping With In Situ Silicon Oxide Cleanup

IP.com Disclosure Number: IPCOM000067696D
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Bartholomew, RF Gdula, RA Revitz, M [+details]

Abstract

Photoresist stripping by plasma O(2) can result in a growth of Si(x)O(y) if bare regions of silicon, such as a contact surface, are exposed. The silicon oxide formed in the contact hole prevents overlying materials from making contact and also behaves as a diffusion barrier. Thus, when a doped polycrystalline silicon film is deposited and heat treated, diffusion from the doped polycrystalline silicon to the substrate, in the contact hole region, does not occur. The barrier silicon oxide formed during plasma stripping of photoresist prevents the formation of a buried contact.