Browse Prior Art Database

Process For Separate Control Of Intrinsic And Extrinsic Base Doping In Semiconductor Device Fabrication

IP.com Disclosure Number: IPCOM000067702D
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Antipov, I [+details]

Abstract

Semiconductor devices fabricated with this process have self-aligned extrinsic base regions which overlap intrinsic base implant regions to prevent low punch through voltage around the emitter perimeter, when intrinsic base implant is done after emitter implant and drive-in or diffusion.