Browse Prior Art Database

Process For Separate Control Of Intrinsic And Extrinsic Base Doping In Semiconductor Device Fabrication Disclosure Number: IPCOM000067702D
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue


Related People

Antipov, I [+details]


Semiconductor devices fabricated with this process have self-aligned extrinsic base regions which overlap intrinsic base implant regions to prevent low punch through voltage around the emitter perimeter, when intrinsic base implant is done after emitter implant and drive-in or diffusion.