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Doping Of SiO(2) To Control The Flat Band Charge For Stability Of FET Devices

IP.com Disclosure Number: IPCOM000067703D
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Lechaton, JS [+details]

Abstract

The method for controlling effective flat band charge in sputtered SiO(2) films consists of controlled doping of the sputtered SiO with an atomic species whose oxidation state is less than that of silicon, for example, aluminum/+3/ or titanium/+3/ The doping can be accomplished in several ways: 1) Sputter from a SiO(2) target which is appropriately doped with Al; 2) Co-sputter off an aluminum target and a SiO(2) target in the same system; or 3) Bleed in with the inert gas, such as argon, a vapor containing the atomic species Al (reactive deposition).