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Dual Schottky Diode Cell

IP.com Disclosure Number: IPCOM000067713D
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Cretelli, EJ Dachtera, WR [+details]

Abstract

This article discloses a memory cell design in a bipolar technology wherein the required Schottky barrier diode device is realized by a multiplicity of separate diodes in the same region. The physical design that results is efficient because of the compact size and low series resistance obtained.