Device For Detecting Defects In P- Silicon Substrate
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20
The illustrated device enables the defects existing in a P- silicon substrate to be detected quickly and in a nondestructive manner. This is done by measuring the reverse leakage current in a superficial planar junction induced by an electrical field and defined by the interface between a P- silicon wafer and an electrolyte.