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Device For Detecting Defects In P- Silicon Substrate

IP.com Disclosure Number: IPCOM000067717D
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Grivet, F d'Olce, J Sautereau, J [+details]

Abstract

The illustrated device enables the defects existing in a P- silicon substrate to be detected quickly and in a nondestructive manner. This is done by measuring the reverse leakage current in a superficial planar junction induced by an electrical field and defined by the interface between a P- silicon wafer and an electrolyte.