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Directional Etching With XeF(2) And Other Active Gases

IP.com Disclosure Number: IPCOM000067732D
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Coburn, JW Winters, HF [+details]

Abstract

Directional etching of silicon by XeF(2) and other noble gas halides is effected by the following method. As shown in the figure, this anisotropic etching method includes the steps of directing a plurality of streams or jets of XeF(2) gas 12 from an array of capillary tubes 14 at a silicon target 16. The capillary arrays are commercially available and consist of a number of small tubes where the ratio of the length to the diameter is large. The vacuum system 18 is maintained at a background pressure of the order of 10/-4/ torr by means of a pump (not shown) connected to outlet 30. Most, if not all, of the XeF(2) gas reacting with the target will have a directionality determined by the position of the array of capillary tubes.