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Impurities present at the surface of niobium films are driven into the bulk film during the cleaning procedure when cleaning is done by high energy ion bombardment (argon ions of 3 kV).
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Improvement Of The Quality And Uniformity Of Small-Area Josephson
Impurities present at the surface of niobium films are driven into the bulk film
during the cleaning procedure when cleaning is done by high energy ion
bombardment (argon ions of 3 kV).
Surface cleaning, using high-energy ions, is one of the
processing steps performed prior to barrier growth in order to
fabricate Josephson devices. Drive-in of impurities is undesirable.
The cleaning step, however, cannot be omitted as it influences the
In junction formation, surface cleaning of the base electrode is started at low
ion energies in order to remove adsorbed or chemisorbed gases instead of
driving them into the film. This step is followed by surface cleaning with high-
energy ions. Removal of material, basically of oxides grown under uncontrolled
conditions, is achieved that way.
In contrast to previous processes, small area niobium junctions, for example,
2 x 8 Mum, are now obtained with the same quality as large area junctions, e.g.,
50 x 10 Mum.