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Structure And Fabrication Process Of A Cryogenic Connector

IP.com Disclosure Number: IPCOM000067752D
Original Publication Date: 1979-Sep-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Bassous, E Brown, AV [+details]

Abstract

The process to be described below permits the fabrication of an electrical connector which consists of a solid substrate 1 with a plurality of cavities 2 formed therein to permit the insertion of pin connections 3 into a liquid metal contact material 4 which is held in cavity 2. The walls of cavity 2 are covered with metallization 5 which in turn connects to diffusion 6 at the bottom of cavities 2. In this manner, one side of substrate 1 is perfectly planar and permits discrete electrical connection between diffusions 6 by means of an interconnection 7, as shown in Fig. 1. AB The structure of Fig. 1 may be fabricated as follows: (1) Silicon wafers of (110) or (100) orientation and N-conductivity type are thermally oxidized to grow approximately 1 Mum thick SiO(2) (Fig. 2A).