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Reactive Ion Etching Of Silicon

IP.com Disclosure Number: IPCOM000067815D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Schaible, PM Schwartz, GC [+details]

Abstract

This technique allows larger concentrations of chlorine to be used in RIE (reactive ion etching) and hence higher etch rates of silicon without the occurrence of lateral chemical attack of N+ arsenic doped layer.