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Reactive Ion Etching Of Silicon Disclosure Number: IPCOM000067815D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

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Related People

Schaible, PM Schwartz, GC [+details]


This technique allows larger concentrations of chlorine to be used in RIE (reactive ion etching) and hence higher etch rates of silicon without the occurrence of lateral chemical attack of N+ arsenic doped layer.