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Process For SBD Metallurgies

IP.com Disclosure Number: IPCOM000067818D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Howard, JK Reith, TM Rothman, LB Totta, PA White, JF [+details]

Abstract

Figs. 1-5 illustrate the steps of a process for forming low barrier Schottky barrier diodes (SBDs). The process includes a blanket-depositing of a low barrier metal (e.g. Ta, TiW) on clean silicon through a suitable mask (e.g., silicon oxide, silicon nitride or a composite thereof), as shown in Fig. 1.