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Increased Hybrid Breakdown Strengths For CCD Devices Using Two Levels Of Polycrystalline Silicon

IP.com Disclosure Number: IPCOM000067830D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Dockerty, RC Pliskin, WA Poponiak, MR Revitz, M Shepard, JF [+details]

Abstract

A critical parameter in charge-coupled device (CCD) applications using two levels of polycrystalline silicon is the breakdown voltage or breakdown strength of the polyoxide (silicon oxide grown from the first layer of polycrystalline silicon or Poly I) between polycrystalline silicon levels. Two specific treatments performed on Poly I ultimately result in a polyoxide insulator with increased breakdown voltage characteristics for CCD structures.