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Vacuum Baking Of Photoresist-Coated Wafers For High Current Ion Implant Processing Disclosure Number: IPCOM000067833D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue


Related People

Bayer, EH Jung, G Marsh, RL [+details]


Photoresist is used as a masking material in many ion implantation processing steps. The state-of-the-art photoresist has been adequate in making ion beams until ion beams of higher than usual beam currents (e.g., I(B) Greater than 300 Mu a) were considered for use. High current ion beams are now employed where high doses (e.g., Greater than 10/14/ ions) have to be achieved in reasonably short process times in order to maintain high throughput rates.