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Process For Providing Deep Trench Silicon Isolation

IP.com Disclosure Number: IPCOM000067836D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Burkhardt, PJ Frieser, RG Hoeg, AJ [+details]

Abstract

The following process uses a mask film which is not significantly erodible in a silicon/silicon dioxide reactive ion etch ambient, and can be patterned in a workable manner. One such film is MgO.