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The following process uses a mask film which is not significantly erodible in a silicon/silicon dioxide reactive ion etch ambient, and can be patterned in a workable manner. One such film is MgO.
English (United States)
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Process For Providing Deep Trench Silicon Isolation
The following process uses a mask film which is not significantly erodible in
a silicon/silicon dioxide reactive ion etch ambient, and can be patterned in a
workable manner. One such film is MgO.
The MgO mask 10 can be formed on a silicon substrate 11 by a deposition
process and followed by a wet etching or lift-off process, which results in Fig. 1.
Reactive ion etching with chlorine (5%) /argon (95%) atmosphere at 10 microns
pressure, 13.56 MH(2), and 1.6 watts/cm/2/ results in trenches 12 where isolation
regions are desired, as shown in Fig. 2. Fig. 3 shows the structure following
chemical vapor deposited SiO layer 13, photoresist blockout mask 14 formed by
standard photolithography processes. and a photoresist covering layer 15.
Reactive ion etching using conventional gases and conditions removes the
photoresist layers 14 and 15, and the SiO(2) above the MgO layer 10, as shown
in Fig. 4. The purpose of the blockout mask 14 is to obtain uniform etching of
the SiO(2). The MgO layer 10 is removed by an 8% oxalic acid solution at 4O
degrees C to produce the Fig. 5 structure. The structure may now be used to
form semiconductor devices in the isolated monocrystalline silicon regions.
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