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Schottky Barrier Diode Process

IP.com Disclosure Number: IPCOM000067840D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Berenbaum, L Reith, TM Totta, PA White, JF [+details]

Abstract

Conventional lift-off processes, as, for example. for fabricating Schottky barrier diodes (SBDs) utilizing a silicon oxide/silicon nitride coating, may have a reliability exposure resulting from the entrapment of residual organic (from the lift-off structure) under the nitride ledge, as shown in Fig. 1.