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Nine-Mask Complementary Bipolar Process Disclosure Number: IPCOM000067841D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

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Doo, VY [+details]


A bipolar complementary device consists mainly of a PNP and an NPN transistor. The two transistors are likely to have different frequencies, e.g., f(NPN) greater than or Equal to f(PNP). The device performance can only be as good as the lower frequency transistor. Hence in designing the complementary device, it is essential to maximize the PNP transistor frequency. The process here intends to accomplish this requirement.