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Method For Eliminating Contamination By Si(3)N(4) And/Or SIO(2) Particles In Chemical Deposition Equipment

IP.com Disclosure Number: IPCOM000067846D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Bronchard, JP Cholley, JF Gaillard, J Perrois, P [+details]

Abstract

The composite Si(3)N(4) - SiO(2) insulating layer is often used in silicon wafer processing either as a passivating or a masking layer. The deposition step takes place in a barrel-type reactor. Wafers are disposed on the radial sectors of a truncated cone-shaped susceptor. It has been noticed that wafers suffered a contamination caused by Si(3)N(4) and/or SiO(2) particles due to internal stresses at the Si(3)N(4) - SiO(2) layer interface which leave cracks in the susceptor composite layer.