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Determining The Sputter Contamination Of An Ion Implantation System

IP.com Disclosure Number: IPCOM000067863D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Briska, M Schmitt, A [+details]

Abstract

During the ion implantation of silicon wafers, metallic impurities, in particular iron, are deposited on the wafer surface by undesirable sputter effects of the ion beam at different parts of the implantation system. As such contamination of the silicon leads to a very small yield of serviceable chips. the sputter behavior of implantation systems has to be measured and eliminated.