Browse Prior Art Database

Lateral PNP Transistor With Constant Base Width

IP.com Disclosure Number: IPCOM000067864D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Briska, M Eisenbraun, E Thiel, KP [+details]

Abstract

Previously, lateral PNP transistors were produced by opening two windows in silicon dioxide and by performing a P+ diffusion. During this process, the reproducibility of the base width, which is a function of the spacing of the two windows, is limited by the process tolerances.