Lateral PNP Transistor With Constant Base Width
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20
Previously, lateral PNP transistors were produced by opening two windows in silicon dioxide and by performing a P+ diffusion. During this process, the reproducibility of the base width, which is a function of the spacing of the two windows, is limited by the process tolerances.