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Lateral PNP Transistor With Constant Base Width Disclosure Number: IPCOM000067864D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

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Briska, M Eisenbraun, E Thiel, KP [+details]


Previously, lateral PNP transistors were produced by opening two windows in silicon dioxide and by performing a P+ diffusion. During this process, the reproducibility of the base width, which is a function of the spacing of the two windows, is limited by the process tolerances.