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Power Transistor For Rectifier/Regulator Applications

IP.com Disclosure Number: IPCOM000067912D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Cuttino, RL Ogura, S Stephens, GB [+details]

Abstract

This article describes a unique construction for a low saturation voltage, high BV(EBS) power transistor suitable for use in rectifier/ regulator applications. The unique construction provides a reduction of saturation voltage, an increased emitter-base breakdown voltage, an improved density of the effective emitter area and increased uniformity of base-emitter biasing.