Power Transistor For Rectifier/Regulator Applications
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20
This article describes a unique construction for a low saturation voltage, high BV(EBS) power transistor suitable for use in rectifier/ regulator applications. The unique construction provides a reduction of saturation voltage, an increased emitter-base breakdown voltage, an improved density of the effective emitter area and increased uniformity of base-emitter biasing.