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Etching Process For Tantalum And Niobium

IP.com Disclosure Number: IPCOM000067941D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Missel, L [+details]

Abstract

An improved etching solution for etching tantalum or niobium contains 2 to 10 volume % 48% HF, 25 to 50 volume % 95% H(2) SO(4) and a wetting agent, for example, 40 ppm perfluorooctyl sulfonic acid salt.