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Bipolar Transistor Structure With Extended Metal Base Contacts And Diffused Or Implanted Emitter Disclosure Number: IPCOM000067962D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

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Ning, TH Yu, HN [+details]


In U.S. Patent 3.398,335 a bipolar transistor structure is described having an extended metal base contact and an epitaxially grown emitter. This article describes a bipolar transistor structure with an extended metal base contact and a conventional diffused or implanted emitter.