Bipolar Transistor Structure With Extended Metal Base Contacts And Diffused Or Implanted Emitter
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20
In U.S. Patent 3.398,335 a bipolar transistor structure is described having an extended metal base contact and an epitaxially grown emitter. This article describes a bipolar transistor structure with an extended metal base contact and a conventional diffused or implanted emitter.