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A positive photoresist pattern may be stabilized against flow at high temperatures by exposing the developed photoresist pattern to a flooding electron beam.
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Resist Stabilization By Electron Beam
A positive photoresist pattern may be stabilized against flow at high
temperatures by exposing the developed photoresist pattern to a flooding
Silicon wafers which have been coated with positive photoresist and
patterned for lift-off processing are typically subjected to heat during the
evaporation or sputtering process. This heat causes resist flow, which damages
the lithographic pattern. If patterned wafers are exposed, in vacuum, to 8 x 10/-
5/ coulomb/cm/2/ flood of electrons at 20 KV, the tendency of the resist to flow,
when heated, is practically eliminated.