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III V - II VI Narrow Junction Lasers

IP.com Disclosure Number: IPCOM000067967D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Marinace, JC [+details]

Abstract

III V - II VI narrow junction lasers can be formed using ZnSe, which has a close lattice match to GaAs and can be grown into grooves or tunnels on GaAs. In addition to that property, ZnSe also possesses the following pertinent properties: 1. A lower index of refraction than that of GaAs. 2. A relatively high electrical resistivity in the as-grown state. 3. It is negligibly affected by zinc diffusion from the contiguous GaAs.