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Wear Resistant Substrates For MR Heads With Good Thermal Conductivity

IP.com Disclosure Number: IPCOM000067973D
Original Publication Date: 1979-Oct-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Arnold, RW Bajorek, CH Cheatham, SD McCormick, W Silkensen, RD [+details]

Abstract

In operation, magnetoresistive (MR) thin film permalloy (80:20-Ni:Fe) heads require a rather high current density. Consequently, the film underlayer (substrate) must possess good thermal conductivity to provide good power dissipation. Good thermal conductivity is also required to minimize thermal spike noise caused by frictional heating. Contrastingly, the substrate must have high resistivity so the sense current applied through the thin film will not be shunted through that substrate. Thermally oxidized silicon serves these purposes well. Additionally, the mechanical and physical properties of silicon meet other requirements of a substrate material for this application.