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Double Polysilicon Depletion Mode MOS Transistor Structure

IP.com Disclosure Number: IPCOM000068047D
Original Publication Date: 1979-Nov-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Varshney, RC [+details]

Abstract

This is an improved depletion-mode MOS (DMOS) transistor structure having a highly controllable channel length and uniform P+ doping along the channel.