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Bidirectional Capacitor

IP.com Disclosure Number: IPCOM000068062D
Original Publication Date: 1979-Nov-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Spina, WJ [+details]

Abstract

In silicon gate NMOS technology, the thin oxide capacitors are unidirectional because if their poly-to-diffusion voltage becomes less than the device's threshold voltage, the surface of the channel is no longer inverted and the capacitance is reduced to a small value.