Protect Device For LSI FET Circuits
Original Publication Date: 1979-Nov-01
Included in the Prior Art Database: 2005-Feb-20
Large-scale integrated circuits are, for obvious reasons, very sensitive to over-voltages and need to be protected against these over-voltages. For instance, LSI FET circuits have been protected by inserting, right after the input-output (I/O) metal pad, protective devices incorporating a lateral NPN transistor and a series resistor.