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Protect Device For LSI FET Circuits

IP.com Disclosure Number: IPCOM000068065D
Original Publication Date: 1979-Nov-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Edwards, N [+details]

Abstract

Large-scale integrated circuits are, for obvious reasons, very sensitive to over-voltages and need to be protected against these over-voltages. For instance, LSI FET circuits have been protected by inserting, right after the input-output (I/O) metal pad, protective devices incorporating a lateral NPN transistor and a series resistor.