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Problems caused by alpha-radiation in charge-coupled device (CCD) or capacitor storage device memories can be alleviated by deliberately introducing lattice damage in the silicon.
English (United States)
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Reduction Of Alpha Radiation Impact On CCD Memories
Problems caused by alpha-radiation in charge-coupled device (CCD) or
capacitor storage device memories can be alleviated by deliberately introducing
lattice damage in the silicon.
In general, active memory device areas are limited to the top two microns of
silicon. The remaining silicon serves as the mechanical support for the top two
microns. As a 5 MeV alpha particle travels 25 microns into the silicon bulk, at
least 20 microns of its path are situated in the silicon bulk outside the active
device area. Therefore, most electron-hole pairs generated by alpha particles
occur in the bulk. Recombination rates of electron-hole pairs can be substantially
increased by the presence of silicon lattice damage.
Such silicon lattice damage can be easily introduced by ion implantation or by
porous silicon formation. However, it is difficult to generate such silicon lattice
damage without causing "leakage problems" in the top two microns where the
active devices are located. A defectfree two-micron epitaxial silicon layer has to
be grown on an ionimplanted or porous silicon surface in order to obtain the
A simple method of manufacturing a substrate having few defects in the top
two microns of silicon and a lot of defects elsewhere utilizes an oxygen-rich
silicon crystal wafer. By treating the wafer in N(2) or low oxygen ambient at 1000
degrees C, a dislocation-free silicon surface section is formed, while...