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Ion Implantation Using A Laser-Solid Interaction As The Ion Source

IP.com Disclosure Number: IPCOM000068125D
Original Publication Date: 1979-Nov-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Coburn, JW Phipps, PB Winters, HF [+details]

Abstract

A device 10 for ion implantation includes a vacuum system 12 connected through an outlet 14 to a vacuum pump (not shown). The device 10 contains a solid source material 16 that can be biased at whatever ion energy is desired by accelerating voltage means 18. A laser generator 20 directs laser pulses 22 through a window 24 to impact the solid source material 16, thereby causing a significant fraction of the material 16 to be vaporized and leave the surface as ions. These ions are focused and directed by electrical means 26 to the target 28. The extent to which multiple-ionized species are created and the kinetic energy of the ejected ions depend to a large degree on the laser power.