Decrease Of Proximity Effects In Electron Beam Lithography
Original Publication Date: 1979-Nov-01
Included in the Prior Art Database: 2005-Feb-20
The proximity effect in electron beam lithography (EBL) produces resist exposure in regions of the resist film that were not originally addressed by the electron beam due to electron scattering. This results in variations in resist exposure with line width (intra-line proximity) and line gap (inter-line proximity) in a typical VLSI pattern.