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Decrease Of Proximity Effects In Electron Beam Lithography

IP.com Disclosure Number: IPCOM000068127D
Original Publication Date: 1979-Nov-01
Included in the Prior Art Database: 2005-Feb-20

Publishing Venue

IBM

Related People

Authors:
Kyser, DF Ting, CH [+details]

Abstract

The proximity effect in electron beam lithography (EBL) produces resist exposure in regions of the resist film that were not originally addressed by the electron beam due to electron scattering. This results in variations in resist exposure with line width (intra-line proximity) and line gap (inter-line proximity) in a typical VLSI pattern.