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Via Profiling By Plasma Etching With Varying Ion Energy Disclosure Number: IPCOM000068252D
Original Publication Date: 1979-Dec-01
Included in the Prior Art Database: 2005-Feb-20

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Koste, WW Mathad, GS Patnaik, B [+details]


In current RIE (reactive ion etch) processing (Figs. 1A-1D) for via etching, the desired profile is obtained by controlling (1) the postbake resist profile before etching and (2) the rate ratio (quartz/resist) during etching. These are not easily controllable from run-to-run, and can lead to poor etch bias control.